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1

Growth of GaN layers onto misoriented (0001) sapphire by metalorganic chemical vapor deposition

Pécz, B., di Forte-Poisson, M. A., Huet, F., Radnóczi, G., Tóth, L., Papaioannou, V., Stoemenos, J.

Journal:

Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 1.97 MB

english, 1999

2

Cross-sectional transmission electron microscopic study of Au/GaP and Au/InP contacts

B. Pécz, R. Veresegyházy, G. Radnóczi, A. Barna, I. Mojzes, O. Geszti, G. Vincze

Year:

1991

Language:

english

File:

PDF, 904 KB

english, 1991

3

Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors

Ostermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Schmid, M., Tóth, L., Pécz, B., Carlin, J.-F., Gonschorek, M., Grandjean, N., Strasser, G., Pogany, D., Kuzmik, J.

Journal:

Applied Physics Letters

Year:

2010

Language:

english

File:

PDF, 669 KB

english, 2010

4

Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

D. Gogova, A. Kasic, H. Larsson, C. Hemmingsson, B. Monemar, F. Tuomisto, K. Saarinen, L. Dobos, B. Pécz, P. Gibart, B. Beaumont

Year:

2004

Language:

english

File:

PDF, 613 KB

english, 2004

5

Epitaxial lateral overgrowth of GaN on Si (111)

Feltin, E., Beaumont, B., Vennéguès, P., Vaille, M., Gibart, P., Riemann, T., Christen, J., Dobos, L., Pécz, B.

Journal:

Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 744 KB

english, 2003

6

V-shaped defects connected to inversion domains in AlGaN layers

Pécz, B., Makkai, Zs., di Forte-Poisson, M. A., Huet, F., Dunin-Borkowski, R. E.

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 681 KB

english, 2001

7

Ion beam synthesis of graphite and diamond in silicon carbide

Heera, V., Skorupa, W., Pécz, B., Dobos, L.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 592 KB

english, 2000

8

Regrowth of a thin InP surface covering layer in the Au/InP system during annealing

Pécz, B., Radnóczi, G., Barna, P. B., Zsoldos, Éva

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 608 KB

english, 1992

9

Ion-beam synthesis of epitaxial silicon carbide in nitrogen-implanted diamond

Heera, V., Fontaine, F., Skorupa, W., Pécz, B., Barna, Á.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 614 KB

english, 2000

10

Epitaxial aluminum carbide formation in 6H–SiC by high-dose Al[sup +] implantation

Stoemenos, J., Pécz, B., Heera, V.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 432 KB

english, 1999

11

Ion mixing enhanced wafer bonding for silicon-on-insulator structures

Khánh, N. Q., Fried, M., Tóth, A., Gyulai, J., Pécz, B.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 756 KB

english, 1992

12

High-fluence Si-implanted diamond: Formation of SiC nanocrystals and sheet resistance

Weishart, H., Heera, V., Eichhorn, F., Pécz, B., Barna, Á., Skorupa, W.

Journal:

Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 881 KB

english, 2003

13

The effect of ion beam treatment and subsequent annealing on Au/GaAs contacts

Pécz, B., Radnóczi, G., Horváth, Zs. J., Barna, P. B., Jároli, Erika, Gyulai, J.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.04 MB

english, 1992

14

Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer

Pécz, B., El-Shaer, A., Bakin, A., Mofor, A.-C., Waag, A., Stoemenos, J.

Journal:

Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 1.01 MB

english, 2006

15

Phase formation due to high dose aluminum implantation into silicon carbide

Heera, V., Reuther, H., Stoemenos, J., Pécz, B.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 849 KB

english, 2000

16

A view of the implanted SiC damage by Rutherford backscattering spectroscopy, spectroscopic ellipsometry, and transmission electron microscopy

G. Battistig, N. Q. Khánh, P. Petrik, T. Lohner, L. Dobos, B. Pécz, J. García López, Y. Morilla

Journal:

Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 674 KB

english, 2006

17

Growth of Epitaxial β-SiC at the SiO[sub 2]/Si Interface as a Result of Annealing in CO

Krafcsik, O. H., Josepovits, K. V., Tóth, L., Pécz, B., Deák, P.

Journal:

Journal of The Electrochemical Society

Year:

2002

Language:

english

File:

PDF, 522 KB

english, 2002

18

Structure of sputtered nanocomposite CrC[sub x]∕a-C:H thin films

Gassner, G., Patscheider, J., Mayrhofer, P. H., Hegedus, E., Tóth, L., Kovacs, I., Pécz, B., Srot, V., Scheu, Ch., Mitterer, C.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2006

Language:

english

File:

PDF, 794 KB

english, 2006

19

AIP Conference Proceedings [AIP 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E-MRS Symposium∗ F∗ - Strasbourg, (France) (8–10 October 2010)] - Selective Growth of Nanocrystalline 3C-SiC Thin Films on Si

Beke, D., Pongrácz, A., Battistig, G., Josepovits, K., Pécz, B., Ferro, Gabriel, Siffert, Paul

Year:

2010

Language:

english

File:

PDF, 752 KB

english, 2010

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